AESF Heritage: SUR/FIN 2000 – European Academy of Surface Technology: Copper Microelectrodeposition: The Influence of Different Additives on Growth in Microprofiles
In this work, a pH 3.0, 0.8M copper sulfate electrolyte was used for plating onto both blanket and patterned silicon wafers. This novel electrolyte, proposed by U. Landau, involves a number of beneficial effects with respect to the conventional bath.
Source | NASF
This is a republished paper presented during SUR/FIN 2000 in Chicago, Illinois, part of the European Academy of Sciences (EAST) Seminar. An acid copper sulfate bath is the standard electrolyte for copper plating on wafers for interconnection. In this work, a pH 3.0, 0.8M copper sulfate electrolyte was used for plating onto both blanket and patterned silicon wafers. This novel electrolyte, proposed by U. Landau, involves a number of beneficial effects with respect to the conventional bath. The influence of four different additives (namely chloride, polyethylene glycol, a thiocompound and a quaternary ammonium salt) on structure, morphology, surface roughness, and gap-filling properties was investigated. The synergetic effect of additives is discussed with reference to surface roughness and thickness uniformity. The full paper can be accessed and printed at short.pfonline.com/NASF25Feb2.
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